发明名称 Semiconductor inspection method and device that consider the effects of electron beams
摘要 Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.
申请公布号 US8309922(B2) 申请公布日期 2012.11.13
申请号 US201013148205 申请日期 2010.01.20
申请人 ANDO TOHRU;SASAJIMA MASAHIRO;HITACHI HIGH TECHNOLOGIES CORPORATION 发明人 ANDO TOHRU;SASAJIMA MASAHIRO
分类号 H01J37/28;G01N23/00 主分类号 H01J37/28
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