发明名称 |
Read conditions for a non-volatile memory (NVM) |
摘要 |
A method and memory are provided for determining a read reference level for a plurality of non-volatile memory cells. The method includes: performing a program operation of the plurality of non-volatile memory cells; determining a program level of a least programmed memory cell of the plurality of memory cells; performing an erase operation of the plurality of non-volatile memory cells; determining an erase level of a least erased memory cell of the plurality of memory cells; determining an operating window between the program level and the erase level; and setting the read reference level to be a predetermined offset from the erase level if the operating window is determined to compare favorably to a predetermined value. The memory includes registers for storing the program level and the erase level. |
申请公布号 |
US8310877(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US20110985724 |
申请日期 |
2011.01.06 |
申请人 |
CUNNINGHAM JEFFREY C.;COOK THOMAS D.;MCGINTY STEPHEN F.;SYZDEK RONALD J.;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
CUNNINGHAM JEFFREY C.;COOK THOMAS D.;MCGINTY STEPHEN F.;SYZDEK RONALD J. |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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