发明名称 |
Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof |
摘要 |
A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85. |
申请公布号 |
US8310857(B2) |
申请公布日期 |
2012.11.13 |
申请号 |
US20100792332 |
申请日期 |
2010.06.02 |
申请人 |
GOUX LUDOVIC;REYES JUDIT LISONI;WOUTERS DIRK;IMEC |
发明人 |
GOUX LUDOVIC;REYES JUDIT LISONI;WOUTERS DIRK |
分类号 |
G11C11/00;H01L29/02;H01L47/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|