| 摘要 |
A plasma deposition source for transferring a deposition gas into a plasma phase and for depositing, from the plasma phase, a thin film onto a substrate moving in a substrate transport direction in a vacuum chamber is described. The plasma deposition source includes a multi-region electrode device adapted to be positioned in the vacuum chamber and including at least one RF electrode arranged opposite to the moving substrate, and an RF power generator adapted for supplying RF power to the RF electrode. The RF electrode has at least one gas inlet arranged at one edge of the RF electrode and at least one gas outlet arranged at the opposed edge of the RF electrode. A normalized plasma volume is provided by a plasma volume defined between an electrode surface and an opposite substrate position, divided by an electrode length. The normalized plasma volume is tuned to a depletion length of the deposition gas. |
