发明名称 A Kyropoulos sapphire single crystal growing device by using elliptic crucible
摘要 <p>Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating.</p>
申请公布号 KR101198163(B1) 申请公布日期 2012.11.12
申请号 KR20110007765 申请日期 2011.01.26
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分类号 C30B15/00;C30B11/00;C30B29/20;H01L21/02 主分类号 C30B15/00
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