发明名称 |
Transistor Substrate For Flat Panel Display Device and Method For Manufacturing The Same |
摘要 |
<p>PURPOSE: A thin film transistor substrate for a flat panel display device and a manufacturing method thereof are provided to prevent damage to source-drain metal due to etchant and developer by covering a flattering film on an exposed source-drain metal layer. CONSTITUTION: A substrate(SUB) is divided into a display area and a non-display area. A semiconductor layer is formed within the display area on the substrate. A gate insulating layer(GI) covers the semiconductor layer. A first concatenated wire(SL1) is formed on the gate insulating layer. An insulating layer(IN) covers a gate element. A flattering film(PL) covers a source-drain element formed on the display area and the non-display area. An anode electrode is connected to the source-drain element and is formed on the flattering film.</p> |
申请公布号 |
KR20120123949(A) |
申请公布日期 |
2012.11.12 |
申请号 |
KR20110041604 |
申请日期 |
2011.05.02 |
申请人 |
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发明人 |
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分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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