发明名称 Transistor Substrate For Flat Panel Display Device and Method For Manufacturing The Same
摘要 <p>PURPOSE: A thin film transistor substrate for a flat panel display device and a manufacturing method thereof are provided to prevent damage to source-drain metal due to etchant and developer by covering a flattering film on an exposed source-drain metal layer. CONSTITUTION: A substrate(SUB) is divided into a display area and a non-display area. A semiconductor layer is formed within the display area on the substrate. A gate insulating layer(GI) covers the semiconductor layer. A first concatenated wire(SL1) is formed on the gate insulating layer. An insulating layer(IN) covers a gate element. A flattering film(PL) covers a source-drain element formed on the display area and the non-display area. An anode electrode is connected to the source-drain element and is formed on the flattering film.</p>
申请公布号 KR20120123949(A) 申请公布日期 2012.11.12
申请号 KR20110041604 申请日期 2011.05.02
申请人 发明人
分类号 H01L29/786;G02F1/136;H01L21/336 主分类号 H01L29/786
代理机构 代理人
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