| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a TMR sensor film using a tantalum insertion layer, and systems thereof. <P>SOLUTION: In one embodiment, a tunnel magnetoresistance (TMR) head includes: a lead layer on a substrate; a seed layer on the lead layer; an antiferromagnetic (AFM) layer on the seed layer; a first ferromagnetic layer on the AFM layer; a second ferromagnetic layer above the first ferromagnetic layer; a coupling layer between the first and second ferromagnetic layers, the coupling layer causing the magnetization of the second ferromagnetic layer to be coupled to the magnetization of the first ferromagnetic layer; a fixed layer over the second ferromagnetic layer; an insertion layer adjacent to the fixed layer or in the fixed layer; a barrier layer above the fixed layer; a free layer above the barrier layer; and a cap layer on the free layer. In another embodiment, the insertion layer is about 0.05-0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB. <P>COPYRIGHT: (C)2013,JPO&INPIT |
