| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can prevent destabilization of device characteristics due to defect of ridges. <P>SOLUTION: A semiconductor laser device of the present invention comprises a semiconductor substrate 1 composed of a first conductivity type III-V compound semiconductor, a first clad layer 2 provided on the semiconductor substrate 1 and composed of a first conductivity type III-V compound semiconductor, an active layer 3 provided on the first clad layer 2 and composed of a III-V compound semiconductor, a second clad layer 4 provided on the active layer 3 and composed of a second conductivity type III-V compound semiconductor, and ridges 11 protruding upward from the second clad layer 4 and formed in a striped-shape each having a top face projecting in a lateral face direction like eaves. <P>COPYRIGHT: (C)2013,JPO&INPIT |
