| 摘要 |
PURPOSE: A thermoelectric module is provided to prevent a short circuit of a p-type semiconductor device and an n-type semiconductor device by including a ferrite device between the p-type semiconductor device and the n-type semiconductor device. CONSTITUTION: A plurality of top metal electrodes(210) is arranged on a top substrate(220). A plurality of bottom metal electrodes(230) is arranged on a bottom substrate(240). A p-type semiconductor device(250) and an n-type semiconductor device(260) are placed between the top substrate and the bottom substrate. A ferrite device(270) is placed between the p-type semiconductor device and the n-type semiconductor device. The ferrite device is comprised of a thermoelectric material which shows a spin Feedback effect.
|
