| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for repeatedly forming barrier films on a surface of a metallic component. <P>SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a lower barrier film 20 on a substrate 15; forming a seed film on the lower barrier film; forming a conductive member on a part of a region of the seed film; forming an upper barrier film 28 on the top surface of the conductive member; removing the seed film in the region where the conductive member is not formed and exposing the lower barrier film in the region where the seed film is removed; forming a lateral barrier film 30 on the side surfaces of the conductive member with lower barrier film exposed; and removing the lower barrier film in the region where the conductive member and the lateral barrier film are not formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
