SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method in which a semiconductor chip is exposed to a high temperature the least number of times.

SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a plurality of semiconductor chips 10 each having bump electrodes 12 connected via a through electrode 13; laminating a second semiconductor chip 10b on a first semiconductor chip 10a such that the bump electrodes 12 confront each other; temporarily pressure bonding the bump electrodes 12 on the semiconductor chip 10a with the bump electrodes on the semiconductor chip 10b; laminating a third semiconductor chip 10c on the semiconductor chip 10b such that the bump electrodes 12 confront each other; temporarily pressure bonding the bump electrodes 12 on the semiconductor chip 10b with the bump electrodes 12 on the semiconductor chip 10c to form a chip laminate 11; and actually pressure bonding the plurality of bump electrodes 12 collectively that are temporarily pressure bonded in the chip laminate 11.

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