| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming device which can form a thin film on a film forming subject favorably, and a film forming method. <P>SOLUTION: The film forming device 1A is constituted by using: an introductory pipe 20 which introduces a compound or a mixture containing Si atom as a surface modification material; an introductory pipe 25 which introduces a carrier gas; a hot wall pipe 12 which introduces the surface modification material and the carrier gas inside, heats them, and supplies the mixed surface modification gas; a film formation material object 30 which supplies the film forming material gas containing a metal material by being heated in the inside of hot wall pipe 12; and a substrate maintenance stage 15 holding a film forming substrate 16 for forming a thin film on a film forming surface. The thin film containing at least the metal material is formed on a film forming surface by supplying the surface modification gas and the film forming material gas to the film forming surface of the substrate 16 from the hot wall pipe 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
