发明名称 PROCESSING SYSTEM AND METHOD FOR TREATING A SUBSTRATE
摘要 A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH<SUB>3</SUB>, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.
申请公布号 KR101200132(B1) 申请公布日期 2012.11.12
申请号 KR20067012645 申请日期 2005.02.08
申请人 发明人
分类号 H01L21/3065;H01L21/027;H01L21/311;H01L21/66 主分类号 H01L21/3065
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