| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small-sized and high-sensitivity infrared imaging device by implementing reduction in size of a diode of an infrared detection section. <P>SOLUTION: A manufacturing process of an infrared detection section includes the steps of: forming an insulation film 10 on a semiconductor layer 25 of a first conductivity type; patterning the insulation film to form a contact hole and exposing the semiconductor layer; using at least the insulation film as a mask to inject an element of a second conductivity type into the semiconductor layer and forming a semiconductor layer 24 of the second conductivity type in the semiconductor layer of the first conductivity type; forming a sidewall material film to cover the insulation film by filling the contact hole; forming a sidewall 26 while remaining the sidewall material film on the sidewall of the insulation film by etching the sidewall material film; forming a metal film to extend on the sidewall by filling the contact hole; and forming an electrode 22 by patterning the metal film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
