| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide plasma processing equipment capable of suppressing fluoride of a yttria material. <P>SOLUTION: Plasma processing equipment includes: a processing chamber 7; means 10 for supplying a gas to the processing chamber 7; exhaust means 12 for depressurizing the processing chamber 7; high-frequency power 20 and 21 for generating plasma; high frequency bias power 22 and 23 for accelerating ions entering an object to be processed 4; and an inner wall material having a surface coated with yttria 17 and provided in a side wall of the processing chamber. In the equipment, a fluoride detection sensor 30 capable of detecting a degree of fluoride of the yttria in the processing chamber is installed, and a cylindrical component 41 made of quartz is installed in a side wall portion exposed to high-density plasma, and a high conductive material is installed as an earth 52 in a lower part of the side wall of the processing chamber, so that a cleaning time can be adjusted for suppression of fluoride of the yttria 17 and yttria 37 as a reference in cleaning between etching processing. <P>COPYRIGHT: (C)2013,JPO&INPIT |
