SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method, a substrate processing method and a substrate processing apparatus, which can improve a deposition rate and productivity even at a lower temperature.

SOLUTION: A semiconductor device manufacturing method includes forming a silicon oxide film of a predetermined film thickness on a substrate by alternately and repeatedly performing: a process of forming a silicon containing layer on the substrate by supplying a material gas to the substrate housed in a processing chamber and heated to a first temperature; and a process of producing reactive species containing oxygen by reaction of an oxygen containing gas and a hydrogen containing gas in a reaction preliminary chamber being heated to a second temperature higher than the first temperature and under a pressure less than an atmospheric pressure, and supplying the reactive species to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere less than the atmospheric pressure to oxidize and convert the silicon containing layer formed on the substrate to a silicon oxide layer. In the process of changing the silicon containing layer to the silicon oxide layer, the silicon containing layer is oxidized under a hydrogen containing gas rich condition.

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