发明名称 FORMATION METHOD OF PROTON CONDUCTOR FILM
摘要 <P>PROBLEM TO BE SOLVED: To form a proton conductor film having high crystallinity without oxidizing a substrate consisting of Pd that is a hydrogen permeable metal. <P>SOLUTION: The formation method of a proton conductor film represented by BaZr<SB POS="POST">1-x</SB>Y<SB POS="POST">x</SB>O<SB POS="POST">3</SB>(0.3&ge;x&ge;0) includes a step for adjusting an aqueous solution containing Ba<SP POS="POST">2+</SP>,Zr<SP POS="POST">4+</SP>Y<SP POS="POST">3+</SP>, a step for adjusting a precursor solution by adding KOH to the aqueous solution thereby adjusting the pH, and a step for forming a film under hydrothermal conditions by holding the substrate in the precursor solution subjected to pH adjustment. In particular, a proton conductor film having high crystallinity can be formed by forming it after forming an NiO film on the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012221556(A) 申请公布日期 2012.11.12
申请号 JP20110082491 申请日期 2011.04.04
申请人 PANASONIC CORP 发明人 OTSUKA TAKASHI
分类号 H01B13/00;H01M8/02;H01M8/12 主分类号 H01B13/00
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