| 摘要 |
A LED having a vertical structure and its manufacturing method are provided to increase a luminous efficiency and light extracting effect by forming a TCO layer on a GaN semiconductor layer. A LED(20) having first and second surfaces consists plural semiconductor layers. A first electrode(30) is formed on the first surface of the light emitting layer, and a TCO(Transparent Conductive Oxide) layer(50) is positioned on the second surface of the light emitting layer. A second electrode(60) is formed to contact the TCO layer. The semiconductor layers have a p-type semiconductor layer(23), an active layer(22) positioned on the p-type semiconductor layer, and an n-type semiconductor layer(21) positioned on the active layer. |
