| 摘要 |
A nitride based light emitting device is provided to highly improve inner quantum efficiency by improving the band structure of a quantum well layer through a stress accommodation layer and to improve the characteristics of light by uniformly distributing indium. A nitride based light emitting device includes a light emitting layer(20), and a stress accommodation layer(40). The light emitting layer has a quantum well layer(21) and a quantum barrier layer(22). The stress accommodation layer is located on at least one side of the quantum well layer of the light emitting layers. The quantum barrier layer, the stress accommodation layer, and the quantum well layer are sequentially laminated so that the stress accommodation layer accommodates the stress applied to the quantum well layer. |
