| 摘要 |
An LED having a vertical structure and a method of manufacturing the same are provided to omit an etching process by using a conductive layer of an n-type semiconductor thin film layer, thereby reducing manufacturing costs. An active layer(2) having a quantum well structure is located in between an n-type nitride gallium layer(1) as an electron injection layer and a p-type nitride gallium layer(3) as a hole injection layer. The n-type nitride gallium layer is exposed by etching the p-type nitride gallium layer and the active layer. An n-type electrode(6) is formed at the exposed n-type nitride gallium layer. A p-type electrode(7) is formed on the p-type nitride gallium layer. A buffer layer(5) is formed between a substrate(4) and the n-type nitride gallium layer. |
