发明名称 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor element capable of easily manufacturing an organic semiconductor element having excellent pattern accuracy of an organic semiconductor layer and excellent transistor characteristics. <P>SOLUTION: A manufacturing method of an organic semiconductor element comprises: an electrode formation step of forming a source electrode 2 and a drain electrode 3 on an orientation layer 1 in which a mesomorphism organic semiconductor material is oriented; a step of forming an organic semiconductor layer 4 having the mesomorphism organic semiconductor material on the orientation layer 1 so as to cover the source electrode and the drain electrode; a step of laminating an organic semiconductor layer transfer substrate 8 having a substrate 5 and a lyophilic part 6 and a liquid-repellent part 7 formed on the substrate in a pattern shape on the organic semiconductor layer 4 using the organic semiconductor layer transfer substrate so that the liquid-repellent part is disposed on a channel region C between the source electrode and the drain electrode and thermally transferring the organic semiconductor layer onto the lyophilic part 6 at a liquid crystal phase temperature of the mesomorphism organic semiconductor material; a step of removing the organic semiconductor layer 4 thermally transferred onto the lyophilic part 6 from the orientation layer 1 by peeling the organic semiconductor layer transfer substrate from the orientation layer 1 at a temperature lower than the liquid crystal phase temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012222204(A) 申请公布日期 2012.11.12
申请号 JP20110087669 申请日期 2011.04.11
申请人 DAINIPPON PRINTING CO LTD 发明人 TOMINO TAKESHI;FUJIMOTO SHINYA;MAEDA HIROMI
分类号 H01L29/786;H01L21/336;H01L51/05 主分类号 H01L29/786
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