发明名称 |
MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor element capable of easily manufacturing an organic semiconductor element having excellent pattern accuracy of an organic semiconductor layer and excellent transistor characteristics. <P>SOLUTION: A manufacturing method of an organic semiconductor element comprises: an electrode formation step of forming a source electrode 2 and a drain electrode 3 on an orientation layer 1 in which a mesomorphism organic semiconductor material is oriented; a step of forming an organic semiconductor layer 4 having the mesomorphism organic semiconductor material on the orientation layer 1 so as to cover the source electrode and the drain electrode; a step of laminating an organic semiconductor layer transfer substrate 8 having a substrate 5 and a lyophilic part 6 and a liquid-repellent part 7 formed on the substrate in a pattern shape on the organic semiconductor layer 4 using the organic semiconductor layer transfer substrate so that the liquid-repellent part is disposed on a channel region C between the source electrode and the drain electrode and thermally transferring the organic semiconductor layer onto the lyophilic part 6 at a liquid crystal phase temperature of the mesomorphism organic semiconductor material; a step of removing the organic semiconductor layer 4 thermally transferred onto the lyophilic part 6 from the orientation layer 1 by peeling the organic semiconductor layer transfer substrate from the orientation layer 1 at a temperature lower than the liquid crystal phase temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012222204(A) |
申请公布日期 |
2012.11.12 |
申请号 |
JP20110087669 |
申请日期 |
2011.04.11 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
TOMINO TAKESHI;FUJIMOTO SHINYA;MAEDA HIROMI |
分类号 |
H01L29/786;H01L21/336;H01L51/05 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|