| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem in which: a semiconductor region formed on a surface of a semiconductor substrate to separate a first main electrode region and a second main electrode region, when a large voltage is applied and retained between the first main electrode region and the second main electrode region, easily produces electric field concentration on the surface of the semiconductor substrate to reduce voltage withstanding; and therefore a spiral-shaped field plate having one end conducting to the first main electrode region and the other end conducting to the second main electrode region is provided on a surface of a filed insulating film to reduce the electric field concentration on the surface of the semiconductor substrate; and nevertheless a mismatch in electric potential distribution between the field plate and the surface of the semiconductor substrate reduces a voltage withstanding improving effect by the field plate. <P>SOLUTION: There is provided a semiconductor device including a field plate formed in a logarithmically spiral shape in which a wire interval is increased as it approaches an external end. A desirable match in electric potential distribution between the field plate and a surface of a semiconductor substrate increases a voltage withstanding improving effect by the field plate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
