| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a lateral insulated gate bipolar transistor (IGBT) formed on a laminated substrate having a thin active layer. <P>SOLUTION: A lateral insulated gate bipolar transistor (IGBT) 1 includes p-type collector regions 46, 48 and a p-type collector well region 44. The collector well region 44 encloses the collector regions 46, 48 to contact with the collector regions 46, 48. The impurity density of the collector well region 44 is lower than those of the collector regions 46, 48. <P>COPYRIGHT: (C)2013,JPO&INPIT |
