| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable a distribution of a reaction product on a wafer outer peripheral portion and an incident ion distribution to a wafer outmost peripheral portion to be controlled with a high degree of accuracy, and to perform etching optimally with an etching rate depending on an etching condition. <P>SOLUTION: The plasma processing apparatus which generates plasma in a vacuum processing chamber and performs plasma processing to a sample mounted on a sample placement electrode provided in the vacuum vessel, where the sample placement electrode includes a ring-shaped first susceptor 111 provided on an outer peripheral portion of a surface thereof and a ring-shaped second susceptor 112 provided on an outer periphery of the first susceptor and having a plurality of through holes pierced thereon in a radiation direction and a drive part for driving the second susceptor in a vertical direction, drives the second susceptor in the vertical direction to adjust relative positions between the surface of the sample and the surface of the second susceptor and between the through holes pierced on the second susceptor and the first susceptor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
