| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance performance of a semiconductor device. <P>SOLUTION: By performing ion implantation in each of nMIS regions 1A, 1B and pMIS regions 1C, 1D of a semiconductor substrate 1 in a state in which an offset spacer is formed on sidewalls of gate electrodes GE1, GE2, GE3, GE4, an extension region of a source/drain is formed. In this case, ion implantation is performed separately in each of the nMIS regions 1A, 1B and the pMIS regions 1C, 1D using different photoresist patterns. The offset spacer is formed again whenever the photoresist pattern is formed again. <P>COPYRIGHT: (C)2013,JPO&INPIT |
