| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a graphene film which has a short etching time, and suppresses damage at the time of etching. <P>SOLUTION: The graphene film which has a short etching time and suppresses the damage at the time of etching is formed by performing a graphene film growth step which heats a metal film composed of an alloy of nickel and zinc under a mixed atmosphere containing a hydrocarbon gas and a hydrogen gas, a supporting film forming step for forming the supporting film for supporting the graphene film on the graphene film, and an etching step for removing the metal film by solving with an etching liquid. <P>COPYRIGHT: (C)2013,JPO&INPIT |
