| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode plate for a plasma processing apparatus capable of reducing the number of times of washing the electrode plate, prolonging plasma etching time from washing to the next washing further and efficiently performing plasma processing. <P>SOLUTION: An electrode plate 3 is formed by laminating both electrode constitution plates 31 and 32 and providing a plurality of vent holes 11 passing through in a thickness direction of both electrode constitution plates 31 and 32, and the vent hole 11 is formed by mutually communicating a first hole part 21 of a small diameter provided on a discharge side electrode constitution plate 31 and a second hole part 22 of a large diameter provided on a fixed side electrode constitution plate 32 and having a hole diameter larger than that of the first hole part 21. On an inner wall surface of the second hole part 22, a plurality of grooves along a length direction of the second hole part 22 are formed at an interval in a circumferential direction. On a connection part of the first hole part 21 and the second hole part 22, a ring-like recessed groove part 23 is provided so as to surround the opening of the first hole part 21, and an erected wall part 24 formed by an inner peripheral wall surface of the recessed groove part 23 and an inner wall surface of the first hole part 21 is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
