| 摘要 |
<P>PROBLEM TO BE SOLVED: To compensate for a bad bit error in a semiconductor nonvolatile memory device. <P>SOLUTION: A device includes a bad bit detection module 116 that receives an old page from a memory device 120 and determines whether the page has a bad bit. The device further includes a bad bit correction module 118 that generates a new page, determines a location of the bad bit. The bad bit correction module 118 determines a preferred value of the bad bit, determines a user value of the bad bit, inserts the preferred value into a string of bits corresponding to substantive data of the old page and record the string of bits with the preferred value inserted therein, and stores the new page at an address of the old page. <P>COPYRIGHT: (C)2013,JPO&INPIT |
