| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which can inhibit increase in leakage current via a surface of an extension part of an ohmic contact film from a source electrode and a drain electrode and in leakage current via a defect at a bonded side face part between the ohmic contact film and a semiconductor active film. <P>SOLUTION: One of ohmic contact layers 8 includes a contact part 81 contacting one of electrodes 9, 10 and covered, and an extension part 82 thinner than the contact part 81 in a thickness direction D2 and protruding from one of the electrodes 9, 10 when viewed from the thickness direction D2 to extend to the other of the electrodes 9, 10 to cover a semiconductor active film 7 other than at least a part 71 of the semiconductor active film 7. <P>COPYRIGHT: (C)2013,JPO&INPIT |
