| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves performances of both of n-type and p-type transistors while inhibiting complication of a manufacturing process. <P>SOLUTION: A semiconductor substrate equipped with an n-type MOS transistor and a p-type MOS transistor in a plane of a semiconductor substrate 1 comprises: first insulation layers 3a isolatedly separating first diffusion layers 2a on which the n-type MOS transistor is formed; and second insulation layers 3b isolatedly separating second diffusion layers 2c on which the p-type MOS transistor is formed. The first insulation layer 3a is formed by embedding a silicon nitride film 5 and a silicon oxide film 6 on the silicon nitride film 5 in a first groove 4a formed on a surface of the semiconductor substrate 1. The second insulation layer 3b is formed by embedding the silicon oxide film 6 in a second groove 4b formed on the surface of the semiconductor substrate 1 so as to become wider than the first groove 4a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
