SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to improve electrical characteristics of a semiconductor device by forming the size of crystal grain of channel regions which is adjacent to a gate pattern on a large scale. CONSTITUTION: A laminate structure comprises a gate pattern and a selection gate pattern. The gate pattern comprises a bottom selection pattern, cell gate patterns, and a top gate pattern. A semiconductor patter passes through the laminate structure and is electrically connected to a substrate. A channel structure comprises a first region(P1) having a first semiconductor layer and a second region(P2) having a second semiconductor layer(133). The channel structure additionally comprises a padding pattern(156) which is surrounded by the first area.