| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable thin film transistor. <P>SOLUTION: Among a gate electrode 15, a source electrode 33, a drain electrode 34 of a thin film transistor 20, any one and more electrodes has a barrier film 25 and the barrier film 25 tightly adheres to a deposition object 21 or a semiconductor layer 30. Assuming that Ni and Mo are 100 atom%, the barrier film 25 contains Mo of 7 atom% or more and 70 atom% or less, and has high adhesion with respect to the deposition object 21 composed of glass or the semiconductor layer 30. In addition, in the case where a metal low resistance layer 26 consisting primarily of Cu is formed on a surface of the barrier film 25, Cu does not diffuse to the semiconductor layer 30. <P>COPYRIGHT: (C)2013,JPO&INPIT |
