发明名称 |
BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME |
摘要 |
A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion. |
申请公布号 |
US2012281726(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201213553380 |
申请日期 |
2012.07.19 |
申请人 |
WATANABE HIDEKI;MIYAJIMA TAKAO;IKEDA MASAO;YOKOYAMA HIROYUKI;OKI TOMOYUKI;KURAMOTO MASARU;TOHOKU UNIVERSITY;SONY CORPORATION |
发明人 |
WATANABE HIDEKI;MIYAJIMA TAKAO;IKEDA MASAO;YOKOYAMA HIROYUKI;OKI TOMOYUKI;KURAMOTO MASARU |
分类号 |
H01S5/02 |
主分类号 |
H01S5/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|