| 摘要 |
Provided are a phosphorous-containing copper anode for electrolytic copper plating, a method for manufacturing the same, and an electrolytic copper plating method using the phosphorous-containing copper anode. The phosphorous-containing copper anode obtains a crystal grain boundary structure having a special grain boundary ratio L&sgr;N/LN of 0.4 or more. LN is a unit total special grain boundary length corresponding to a unit area of 1 mm2 obtained by converting a total grain boundary length L. L&sgr;N is a unit total special boundary length corresponding to a unit area of 1 mm2 obtained by converting a total special grain boundary length L&sgr;. By having the configuration described above, a black film is formed evenly on the copper anode at the early stage of the electrolytic copper plating. Plating defect can be reduced by preventing the black film being fallen. |
