发明名称 BARIUM SILICIDE POLYCRYSTAL, METHOD FOR PRODUCING THE SAME AND BARIUM SILICIDE SPUTTERING TARGET
摘要 <P>PROBLEM TO BE SOLVED: To provide a barium silicide polycrystal with high density and free from cracks, and to provide a barium gallium silicide sputtering target. <P>SOLUTION: The barium silicide polycrystal, in which the density is &ge;3.0 g/cm<SP POS="POST">3</SP>and the maximum diameter of silicon coarse grains existing in the barium silicide polycrystal is &le;150 &mu;m, is produced by using barium and silicon powder with average grain diameter of &le;5 mm. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012214310(A) 申请公布日期 2012.11.08
申请号 JP20110079546 申请日期 2011.03.31
申请人 TOSOH CORP 发明人 MESHIDA MASAMI;MATSUMARU KEITARO
分类号 C04B35/58;C23C14/34 主分类号 C04B35/58
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