| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can prevent breakdown due to reverse connection of a bias power supply and can set the standard value of an inter-gate-source voltage to be high. <P>SOLUTION: In a semiconductor device, a drain electrode, a source electrode, and a gate electrode of a sub MOS transistor are connected to a drain electrode, a gate electrode, and a source electrode of a main MOS transistor, respectively. The reverse breakdown voltage of a peripheral pn junction diode, which is formed between a base region and a guard ring, of the sub MOS transistor is higher than that of the main MOS transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
