| 摘要 |
<p>The invention relates to a process for forming a semiconductor layer (26) using a substrate (20), called a donor substrate, made of the same semiconductor material, the process comprising: forming a region (22) with a high lithium concentration in said donor substrate, the lithium concentration in said region being between 5×1018 atoms/cm3 and 5×1020 atoms/cm3; next, implanting hydrogen (24) into the donor substrate, in, or in the vicinity of, the region with a high lithium concentration; applying a carrier (19) to the donor substrate; and applying a thermal budget so as to detach the layer (34) defined by the implantation.</p> |
