| 发明名称 |
FORMATION METHOD FOR OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method for an oxide semiconductor film with excellent semiconductor characteristics, and provide a manufacturing method for a semiconductor device with excellent electric characteristics by use of the oxide semiconductor film. <P>SOLUTION: A formation method for an oxide semiconductor film includes: forming an oxide semiconductor film; forming a hydrogen transmitting film on and in contact with the oxide semiconductor film; forming a hydrogen seizing film on and in contact with the hydrogen transmitting film; and performing heat treatment, thereby eliminating hydrogen from the oxide semiconductor film. Moreover, a manufacturing method for a semiconductor device employing the formation method is also provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2012216794(A) |
申请公布日期 |
2012.11.08 |
| 申请号 |
JP20120062927 |
申请日期 |
2012.03.20 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
IMOTO YUKI;MARUYAMA YOSHIKI;TAKAYAMA TORU |
| 分类号 |
H01L21/477;G02F1/1368;H01L21/20;H01L21/336;H01L21/363;H01L29/786 |
主分类号 |
H01L21/477 |
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