| 摘要 |
A semiconductor device includes gates formed over a semiconductor substrate that are spaced apart from one another and each have a stack structure of a tunnel insulation layer, a floating gate, a dielectric layer, a first conductive layer, and a metal silicide layer, a first insulation layer formed along the sidewalls of the gates and a surface of the semiconductor substrate between the gates and configured to have a height lower than the top of the metal silicide layer; and a second insulation layer formed along surfaces of the first insulation layer and surfaces of the metal silicide layer and configured to cover an upper portion of a space between the gates, wherein an air gap is formed between the gates.
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