| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which minimizes a dead space in arrangement of capacitors and maximizes a shape of individual capacitor. <P>SOLUTION: A semiconductor device comprises: a first and a second transfer gates 2 linearly extending in parallel and adjacent to each other; a first and a second storage node contacts 9 arranged in a gap between the transfer gates and composed of rod-like conductors extending upward, respectively; a first capacitor 14 in which a first electrode and a second electrode are arranged to face each other via an insulation film; and a second capacitor 14 in which a third electrode and a fourth electrode are arranged to face each other via an insulation film. When viewed from above, a top face of the first storage node contact 9 is connected to only a part of the first electrode on the first transfer gate side, and a top face of the second storage node contact 9 is connected to only a part of the third electrode on the second transfer gate side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
