发明名称 MASK PATTERN DATA GENERATION METHOD, MASK MANUFACTURING METHOD, MASK AND MASK PATTERN DATA GENERATION PROGRAM
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask pattern data generation method that achieves improved accuracy in superposition of different layers, with respect to pattern position accuracy in producing a semiconductor. <P>SOLUTION: A mask pattern data generation method includes: a step for choosing whether or not a predetermined layer in design data is a reference layer serving as a reference at the time of superposition; a step for selecting a reference grating as a coordinate reference for mask drawing in the layer chosen as the reference layer, and converting the design data of the layer equivalent to the reference layer into mask drawing data; a step for producing a mask of the layer equivalent to the reference layer; and a step for setting a position coordinate of the produced mask pattern of the layer equivalent to the reference layer, as a second reference grating. The method also includes a step for selecting the second reference grating as the coordinate reference for the mask drawing of the layer not chosen as the reference layer, and converting the design data of the layer not equivalent to the reference layer into the mask drawing data. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012215741(A) 申请公布日期 2012.11.08
申请号 JP20110081632 申请日期 2011.04.01
申请人 DAINIPPON PRINTING CO LTD 发明人 HAYANO KATSUYA;TAKAMIZAWA HIDEYOSHI;YAMAJI MASATAKA;TSUJIMOTO EIJI
分类号 G03F1/68;G03F1/84 主分类号 G03F1/68
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