发明名称 |
LOCAL INTERCONNECT STRUCTURE SELF-ALIGNED TO GATE STRUCTURE |
摘要 |
A common cut mask is employed to define a gate pattern and a local interconnect pattern so that local interconnect structures and gate structures are formed with zero overlay variation relative to one another. A local interconnect structure may be laterally spaced from a gate structure in a first horizontal direction, and contact another gate structure in a second horizontal direction that is different from the first horizontal direction. Further, a gate structure may be formed to be collinear with a local interconnect structure that adjoins the gate structure. The local interconnect structures and the gate structures are formed by a common damascene processing step so that the top surfaces of the gate structures and the local interconnect structures are coplanar with each other.
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申请公布号 |
US2012280290(A1) |
申请公布日期 |
2012.11.08 |
申请号 |
US201113102073 |
申请日期 |
2011.05.06 |
申请人 |
KHAKIFIROOZ ALI;CHENG KANGGUO;DORIS BRUCE B.;HAENSCH WILFRIED E.;HARAN BALASUBRAMANIAN S.;KULKARNI PRANITA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KHAKIFIROOZ ALI;CHENG KANGGUO;DORIS BRUCE B.;HAENSCH WILFRIED E.;HARAN BALASUBRAMANIAN S.;KULKARNI PRANITA |
分类号 |
H01L29/772;H01L21/28 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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