| 摘要 |
A semiconductor device has a three dimensional multi-chip structure including a plurality of chips stacked one on another. The three dimensional multi-chip structure includes a first chip, and a second chip being adjacent to the first chip on an upper or lower side of the first chip, and larger than the first chip. A through electrode is formed in at least one of the first chip or the second chip. The first chip is electrically connected to the second chip via the through electrode. A resin is provided on a surface of the second chip closer to the first chip in a portion of the second chip located outside the first chip.
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