| 摘要 |
A method for manufacturing a polycrystalline silicon ingot includes: solidifying a silicon melt retained in a crucible unidirectionally upward from a bottom surface of the silicon melt, wherein a silicon nitride coating layer is formed on inner surfaces of side walls and an inner side surface of a bottom of the crucible, a solidification process in the crucible is divided into a first region from 0 mm to X (10 mm≦̸X<30 mm) in hight, a second region from X to Y (30 mm≦̸Y<100 mm), and a third region of the Y or higher, with the bottom of the crucible as a datum, a solidification rate V1 in the first region is in a range of 10 mm/h≦̸V1≦̸20 mm/h, and a solidification rate V2 in the second region is in a range of 1 mm/h≦̸V2≦̸5 mm/h. |
