PHOTORESIST MATERIAL AND METHOD FOR FORMING PHOTORESIST FILM

摘要

PROBLEM TO BE SOLVED: To provide a photoresist material excellent in resist resolution and etching durability.

SOLUTION: The photoresist material contains a composite resin (A) in which a polysiloxane segment (a1) having a polymerizable double bond group and a vinyl polymer segment (a2) having an acid group are bonded to each other by a bond expressed by general formula (3). The percentage content of the polysiloxane segment (a1) is 10 to 90 wt.% with respect to the whole solid content of the photoresist material. The solid content of the composite resin (A) has an acid value of 40 to 400 KOHmg/g.

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