| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is hardly cracked by wire-bonding, and a method for manufacturing the same. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate; an insulation film provided on a surface of the semiconductor substrate; a porous metal film provided on the insulation film; a protection film provided on a surface of the porous metal film and having an opening defining a pad region; and a wire wire-bonded to the opening. A stress generated by impacts of wire-bonding is almost absorbed by the porous metal film due to distortion of the porous metal film, and thereby the crack of the insulation film can be prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
