| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with an excellent spectral sensitivity characteristic and without variation in output current in which no contaminant is mixed in a photoelectric conversion layer, and provide a highly reliable semiconductor device including the photoelectric conversion device. <P>SOLUTION: A semiconductor device includes on an insulation surface: a first electrode and a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer including a p-type semiconductor film, an i-type semiconductor film, and an n-type semiconductor film on the overcoat layer. One end of the photoelectric conversion layer is in contact with the first electrode, and an end of the color filter is located on the inside as compared with the other end of the photoelectric conversion layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
