| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that adopts a wiring structure having resistance to heat (process) and allows prevention of the occurrence of deposition on wiring. <P>SOLUTION: A semiconductor device comprises: a wiring pattern that is connected to a semiconductor device main body and contains a gold material; a connection terminal whose one end side is connected to the wiring pattern and contains the gold material; and an insulator that covers the semiconductor device main body, the wiring pattern, and the connection terminal. The semiconductor device further comprises a planar silicide body whose one surface is in contact with one surface of the wiring pattern or the connection terminal and whose other surface is in contact with the insulator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
