METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL, GROUP 13 ELEMENT NITRIDE CRYSTAL PRODUCED THEREBY, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group 13 element nitride crystal by an industrially economical method capable of stably and continuously maintaining a sufficient crystal growth rate.

SOLUTION: The method for producing the group 13 element nitride crystal comprises growing the group 13 element nitride crystal in a molten liquid containing at least a molten salt, a nitride containing a first metal element except group 13 metal elements, a compound containing a second metal element except group 13 elements and different from the first metal element, and a group 13 metal element, wherein the nitride containing the first metal element and the compound containing the second metal element are subjected to an interchange reaction during the growth of the group 13 element nitride crystal.

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