| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element which has a composition ratio controlled over a wide range and uses a compound semiconductor film with excellent crystallinity. <P>SOLUTION: A manufacturing method of a semiconductor element formed by lamination so as to include an n-type semiconductor and a p-type semiconductor on a substrate 110 includes a step of forming a group III-V compound semiconductor film on the substrate 110 by sputtering at least two targets (a first target 21 and a second target 22) made of different group III elements with a gas containing a group V element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
